Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
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Drain–Source Voltage: | 250 Vdc | Drain–Gate Voltage: | 250 Vdc |
---|---|---|---|
Operating And Storage Temperature: | –55 To 150 °C | Input Capacitance: | 1558 PF |
Output Capacitance: | 281 PF | Reverse Transfer Capacitance: | 130 PF |
High Light: | multi emitter transistor,silicon power transistors |
TMOS E–FET™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
16 AMPERES 250 VOLTS
RDS(on) = 0.25 OHM
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating | Symbol | Value | Unit |
---|---|---|---|
Drain–Source Voltage | VDSS | 250 | Vdc |
Drain–Gate Voltage (RGS = 1.0 MΩ) | VDGR | 250 | Vdc |
Gate–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) |
ID ID IDM |
16 10 56 |
Adc
Apk |
Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
Operating and Storage Temperature Range | TJ, Tstg | –55 to 150 | °C |
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, IL = 16 Apk, L = 3.0 mH, RG = 25 Ω) |
EAS | 384 | mJ |
Thermal Resistance — Junction to Case — Junction to Ambient |
RθJC RθJA |
1.0 62.5 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds | TL | 260 | °C |
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